- Non-contact measurement of resistivity, thickness and conductivity (P/N)

- Number of cassette station can be changed by customers request

- Eddy current method for resistiviy, Electric capacitance method for wafer thickness

- Temperature correction for silicon wafer function

Measuring range

- Res  1m ~ 200Ω·cm

- Thickness 150∼800μm (300μm between 150 and 880μm is recommended)

* The range is separated from each Low, Middle, High and S-High probe type.

* Please refer the measurement range for each probe type as below ;

(1) Low : 0.01 ~ 0.5 Ω/sq. (0.001 ~ 0.05 Ω·cm)

(2) Middle : 0.5 ~ 10 Ω/sq. (0.05 ~ 0.5 Ω·cm)

(3) High : 10 ~ 1000 Ω/sq. (0.5 ~ 60 Ω·cm)

(4) S-High : 1000 ~ 3000 Ω/sq. (60 ~ 200 Ω·cm)